Watt-Level 21–25-GHz Integrated Doherty Power Amplifier in GaAs Technology
نویسندگان
چکیده
This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21–25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 30%. At 6-dB back-off, PAE 19% while corresponding gain 10 dB.
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ژورنال
عنوان ژورنال: IEEE Microwave and Wireless Components Letters
سال: 2021
ISSN: ['1531-1309', '1558-1764']
DOI: https://doi.org/10.1109/lmwc.2021.3069555